Optical Transitions and Excitonic Properties of Ge1–xSnx Alloy Quantum Dots-Reference-Cited by-同舟云学术

Optical Transitions and Excitonic Properties of Ge1–xSnx Alloy Quantum Dots

Published:2017-08-16 Issue:33 Volume:121 Page:18299-18306
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Demchenko Denis O.¹,Tallapally Venkatesham¹,Esteves Richard J Alan¹,Hafiz Shopan¹,Nakagawara Tanner A.¹,Arachchige Indika U.¹^ORCID,Özgür Ümit¹

Affiliation:

1. Department of Physics, ‡Department of Chemistry, and §Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia 23284, United States

Funder

Division of Materials Research

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.7b06458

Reference49 articles.

1. Increased photoluminescence of strain-reduced, high-Sn composition Ge1−xSnx alloys grown by molecular beam epitaxy

2. Direct-gap photoluminescence with tunable emission wavelength in Ge1−ySny alloys on silicon

3. Growth of silicon based germanium tin alloys

4. Synthesis of epitaxial SnxGe1−x alloy films by ion‐assisted molecular beam epitaxy

5. Optical critical points of thin-filmGe1−ySnyalloys: A comparativeGe1−ySny∕Ge1−xSixstudy

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