Mixed Effects of the Atomic Arrangement and Surface Chemistry on the Electrodeposition of Bi Thin Films on n-GaAs Substrates
Author:
Affiliation:
1. Dept. Física de Materiales, Universidad Complutense de Madrid, 28040, Madrid, Spain
2. Instituto de Sistemas Optoelectrónicos y Microtecnología. Universidad Politécnica de Madrid, 28040, Madrid, Spain
Funder
Ministerio de Economía y Competitividad
Ministerio de Educación, Cultura y Deporte
Publisher
American Chemical Society (ACS)
Subject
Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.6b09144
Reference56 articles.
1. Origin of the surface-state band-splitting in ultrathin Bi films: from a Rashba effect to a parity effect
2. Localized edge states in two-dimensional topological insulators: Ultrathin Bi films
3. Shubnikov–de Haas oscillations in electrodeposited single-crystal bismuth films
4. Semimetal-to-semiconductor transition in bismuth thin films
5. Anomalous Skin Effect in Bismuth
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1. Use of light for the electrochemical deposition of Bi on n-GaAs substrates;Electrochimica Acta;2019-09
2. Electrodeposition of Bi films on H covered n-GaAs(111)B substrates;Electrochimica Acta;2019-05
3. Electrodeposition of Bi Thin Films on n-GaAs(111)B. II. Correlation between the Nucleation Process and the Structural and Electrical Properties;The Journal of Physical Chemistry C;2018-03-23
4. Electrodeposition of Bi Thin Films on n-GaAs(111)B. I. Correlation between the Overpotential and the Nucleation Process;The Journal of Physical Chemistry C;2018-03-22
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