Use of light for the electrochemical deposition of Bi on n-GaAs substrates-Reference-Cited by-同舟云学术

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Use of light for the electrochemical deposition of Bi on n-GaAs substrates

Published:2019-09 Issue: Volume:316 Page:113-124
ISSN:0013-4686
Container-title:Electrochimica Acta
language:en
Short-container-title:Electrochimica Acta

Author:

Prados Alicia,Ranchal Rocío

Funder

III

OCP

Ministry of Economy and Competitiveness

Consejería de Educación, Juventud y Deporte de la Comunidad de Madrid

European Social Fund

Publisher

Elsevier BV

Subject

Electrochemistry,General Chemical Engineering

Reference53 articles.

1. Effective g factor of electrons and holes in bismuth;Smith;Phys. Rev.,1964

2. Mean free path limitation of thermoelectric properties of bismuth nanowire;Murata;J. Appl. Phys.,2009

3. Anomalous skin effect in bismuth;Smith;Phys. Rev.,1959

4. New oscillatory absorption of ultrasonic waves in bismuth in a magnetic field;Reneker;Phys. Rev. Lett.,1958

5. Direct observation of spin splitting in bismuth surface states;Hirahara;Phys. Rev. B,2007

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1. Electroless Metallization of the Elements: Survey and Progress;ACS Applied Electronic Materials;2022-12-07

2. Electrode Surface Coverage with Deposit Generated Under Conditions of Electrochemical Nucleation and Growth. A Mathematical Analysis;Electrocatalysis;2022-09-03

3. Structural and Physical Properties of Ultrathin Bismuth Films;Uspehi Fiziki Metallov;2021-12

4. On the deconvolution of the concurrent cathodic processes with cobalt deposition onto graphite from feebly acidic bath;Journal of Applied Electrochemistry;2021-07-28

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