Origin of the surface-state band-splitting in ultrathin Bi films: from a Rashba effect to a parity effect-Reference-Cited by-同舟云学术

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Origin of the surface-state band-splitting in ultrathin Bi films: from a Rashba effect to a parity effect

Published:2008-08-28 Issue:8 Volume:10 Page:083038
ISSN:1367-2630
Container-title:New Journal of Physics
language:
Short-container-title:New J. Phys.

Author:

Hirahara T,Miyamoto K,Kimura A,Niinuma Y,Bihlmayer G,Chulkov E V,Nagao T,Matsuda I,Qiao S,Shimada K,Namatame H,Taniguchi M,Hasegawa S

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Reference28 articles.

1. Electronic states of the clean Ge(001) surface near Fermi energy

2. Electronic evidence of asymmetry in theSi(111)3×3−Agstructure

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1. A closer look at how symmetry constraints and the spin–orbit coupling shape the electronic structure of Bi(111);Journal of Physics: Condensed Matter;2023-09-28

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3. Unusual temperature evolution of the band structure of Bi(111) studied by angle-resolved photoemission spectroscopy and density functional theory;Physical Review B;2020-08-06

4. Unveiling the complete dispersion of the giant Rashba split surface states of ferroelectric α−GeTe(111) by alkali doping;Physical Review Research;2020-07-22

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