Electronic evidence of asymmetry in theSi(111)3×3−Agstructure-Reference-Cited by-同舟云学术

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Electronic evidence of asymmetry in theSi(111)3×3−Agstructure

Published:2003-08-14 Issue:8 Volume:68 Page:
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Matsuda Iwao,Morikawa Harumo,Liu Canhua,Ohuchi Satoru,Hasegawa Shuji,Okuda Taichi,Kinoshita Toyohiko,Ottaviani Carlo,Cricenti Antonio,D’angelo Marie,Soukiassian Patrick,Le Lay Guy

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.68.085407/fulltext

Reference30 articles.

1. Instability and Charge Density Wave of Metallic Quantum Chains on a Silicon Surface

2. Angle-resolved-photoemission study of the electronic structure of the Si(001)c(4×2) surface

3. Electronic Structure of the √3 × √3-α and 3×3 Periodicities of Sn/Ge(111)

4. Dynamical Fluctuations as the Origin of a Surface Phase Transition inSn/Ge(111)

5. Defect-blurred two-dimensional phase transition

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2. Silicene: Genesis, remarkable discoveries, and legacy;Materials Today Advances;2022-12

3. Silicene;Xenes;2022

4. Unoccupied electronic states of 2D Si on Ag- 3 -Si(111);Journal of Physics: Condensed Matter;2021-05-05

5. Formation of triangular islands on the Ge(111)-3×3-Ag surface;Surface Science;2021-01

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