Improving Performance of InP-Based Quantum Dot Light-Emitting Diodes by Controlling Defect States of the ZnO Electron Transport Layer-Reference-Cited by-同舟云学术

Improving Performance of InP-Based Quantum Dot Light-Emitting Diodes by Controlling Defect States of the ZnO Electron Transport Layer

Published:2022-12-29 Issue:1 Volume:127 Page:824-830
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Ning Meijing¹,Cao Sheng¹^ORCID,Li Qiuyan¹,Luo Hang¹,Du Zhentao¹,Wang Yunjun²^ORCID,Zhao Jialong¹^ORCID

Affiliation:

1. School of Physical Science and Technology, MOE Key Laboratory of New Processing Technology for Non-ferrous Metals and Materials, Guangxi University, Nanning530004, China

2. Suzhou Xingshuo Nanotech Co., Ltd. (Mesolight), Suzhou215123, China

Funder

Bagui Scholars Program of Guangxi Zhuang Autonomous Region

Natural Science Foundation of Guangxi Province

National Natural Science Foundation of China

Innovation Project of Guangxi Graduate Education

Scientific and Technological Bases and Talents of Guangxi

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.2c07893

Reference49 articles.

1. Good Charge Balanced Inverted Red InP/ZnSe/ZnS-Quantum Dot Light-Emitting Diode with New High Mobility and Deep HOMO Level Hole Transport Layer

2. InP-Based Quantum Dot Light-Emitting Diode with a Blended Emissive Layer

3. Stoichiometry-Controlled InP-Based Quantum Dots: Synthesis, Photoluminescence, and Electroluminescence

4. Inorganic Solid Phosphorus Precursor of Sodium Phosphaethynolate for Synthesis of Highly Luminescent InP-Based Quantum Dots

5. Boosting electroluminescence performance of all solution processed InP based quantum dot light emitting diodes using bilayered inorganic hole injection layers

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