InP-Based Quantum Dot Light-Emitting Diode with a Blended Emissive Layer-Reference-Cited by-同舟云学术

InP-Based Quantum Dot Light-Emitting Diode with a Blended Emissive Layer

Published:2021-03-30 Issue: Volume: Page:1577-1585
ISSN:2380-8195
Container-title:ACS Energy Letters
language:en
Short-container-title:ACS Energy Lett.

Author:

Han Moon Gyu¹,Lee Yeonkyung¹,Kwon Ha-il¹,Lee Heejae¹,Kim Taehyung¹^ORCID,Won Yu-Ho¹^ORCID,Jang Eunjoo¹^ORCID

Affiliation:

1. Samsung Advanced Institute of Technology, Samsung Electronics, Co. Ltd., 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do 16678, Republic of Korea

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Energy Engineering and Power Technology,Fuel Technology,Renewable Energy, Sustainability and the Environment,Chemistry (miscellaneous)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsenergylett.1c00351

Reference42 articles.

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3. Quantum dot light-emitting devices

4. Solution-processed, high-performance light-emitting diodes based on quantum dots

5. High-efficiency light-emitting devices based on quantum dots with tailored nanostructures

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