Growth and Characterization of Wurtzite GaAs Nanowires with Defect-Free Zinc Blende GaAsSb Inserts-Reference-Cited by-同舟云学术

Growth and Characterization of Wurtzite GaAs Nanowires with Defect-Free Zinc Blende GaAsSb Inserts

Published:2008-11-01 Issue:12 Volume:8 Page:4459-4463
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Dheeraj Dasa L.¹,Patriarche Gilles¹,Zhou Hailong¹,Hoang Thang B.¹,Moses Anthonysamy F.¹,Grønsberg Sondre¹,van Helvoort Antonius T. J.¹,Fimland Bjørn-Ove¹,Weman Helge¹

Affiliation:

1. Department of Electronics and Telecommunications, Norwegian University of Science and Technology, NO-7491 Trondheim, Norway, CNRS-LPN, Route de Nozay, F-91460 Marcoussis, France, Department of Physics, Norwegian University of Science and Technology, NO-7491 Trondheim, Norway

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl802406d

Reference20 articles.

1. Growth of nanowire superlattice structures for nanoscale photonics and electronics

2. Spontaneous Superlattice Formation in Nanorods Through Partial Cation Exchange

3. One-dimensional Steeplechase for Electrons Realized

4. Block-by-Block Growth of Single-Crystalline Si/SiGe Superlattice Nanowires

5. Structural characteristics of GaSb∕GaAs nanowire heterostructures grown by metal-organic chemical vapor deposition

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