Chemical Vapor Deposition of HfO2 Thin Films Using the Novel Single Precursor Hafnium 3-Methyl-3-pentoxide, Hf(mp)4-Reference-Cited by-同舟云学术

Chemical Vapor Deposition of HfO2 Thin Films Using the Novel Single Precursor Hafnium 3-Methyl-3-pentoxide, Hf(mp)4

Published:2005-11-24 Issue:26 Volume:17 Page:6713-6718
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Yang Taek S.¹,An Ki-Seok¹,Lee Eun-Joo¹,Cho Wontae¹,Jang Hong S.¹,Park Sun K.¹,Lee Young K.¹,Chung Taek-Mo¹,Kim Chang G.¹,Kim Sungmoon¹,Hwang Jin-Ha¹,Lee Choongkeun¹,Lee Nam-Soo¹,Kim Yunsoo¹

Affiliation:

1. Thin Film Materials Laboratory, Advanced Materials Division, Korea Research Institute of Chemical Technology, Yuseong, P.O. Box 107, Daejeon 305-600, Korea, Department of Materials Science and Engineering, Hongik University, 72-1 Sangsu-dong, Mapo-gu, Seoul 121-791, Korea, and Department of Chemistry, Chungbuk National University, San 48, Gaeshin-dong, Heungduk-gu, Cheongju, Chungbuk 361-763, Korea

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cm050662t

Reference37 articles.

1. Atomic scale measurements of the interfacial electronic structure and chemistry of zirconium silicate gate dielectrics

2. High-κ gate dielectrics: Current status and materials properties considerations

3. High Dielectric Constant of RF-Sputtered HfO2Thin Films

4. Chemical vapor deposition and characterization of HfO2 films from organo-hafnium compounds

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