Significant Enhancement of Hole Mobility in [110] Silicon Nanowires Compared to Electrons and Bulk Silicon-Reference-Cited by-同舟云学术

Significant Enhancement of Hole Mobility in [110] Silicon Nanowires Compared to Electrons and Bulk Silicon

Published:2008-01-19 Issue:2 Volume:8 Page:760-765
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Buin A. K.¹,Verma A.¹,Svizhenko A.¹,Anantram M. P.¹

Affiliation:

1. Nanotechnology Program, University of Waterloo, 200 University Avenue West, Ontario N2T 1P8, Canada, Department of Electrical Engineering, Texas A&M University−Kingsville, Texas 78363, and Silvaco Data Systems Inc., 4701 Patrick Henry Drive, Santa Clara, California 95054

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl0727314

Reference36 articles.

1. Quantum Confinement and Electronic Properties of Silicon Nanowires

2. What is the Ground-State Structure of the Thinnest Si Nanowires?

3. Effect of growth orientation and surface roughness on electron transport in silicon nanowires

4. Si Nanowires as Sensors: Choosing the Right Surface

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