Etching or Stabilization of GaAs(001) under Alkali and Halogen Adsorption-Reference-Cited by-同舟云学术

Etching or Stabilization of GaAs(001) under Alkali and Halogen Adsorption

Author:

Tereshchenko O. E.¹²,Paget D.³,Toropetsky K. V.¹,Alperovich V. L.¹²,Eremeev S. V.⁴⁵,Bakulin A. V.⁴⁵,Kulkova S. E.⁴⁵,Doyle B. P.⁶⁷,Nannarone S.⁶⁸

Affiliation:

1. Institute of Semiconductor Physics, Novosibirsk, 630090 Russian Federation

2. Novosibirsk State University, Novosibirsk, 636090 Russian Federation

3. Physique de la matière condensée, Ecole Polytechnique, CNRS, F-91128 Palaiseau, France

4. Institute of Strength Physics and Materials Science, Tomsk, 636021 Russian Federation

5. Tomsk State University, Tomsk, 634050 Russian Federation

6. Laboratorio Nazionale TASC, INFM-CNR, 34012 Trieste, Italy

7. University of Johannesburg, Auckland Park 2006, South Africa

8. Dipartimento di Ingegneria dei Materiali e dell’Ambiente, Universita di Modena e Reggio Emilia and CNISM, Via Vignolese 905, 41100 Modena, Italy

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

Reference22 articles.

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