Reaction ofI2with the (001) surfaces of GaAs, InAs, and InSb. I. Chemical interaction with the substrate
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.54.2101/fulltext
Reference47 articles.
1. Dry etching of GaAs with Cl2: correlation between the surface Cl coverage and the etching rate at steady state
2. Atomic layer etching of GaAs(110) with Br2 studied by scanning tunneling microscopy
3. Rate constants for the etching of gallium arsenide by molecular iodine
4. The Etching of Gallium Arsenide with Iodine Monochloride
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