Atomic layer etching of GaAs(110) with Br2 studied by scanning tunneling microscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.108706
Reference7 articles.
1. Surface science aspects of etching reactions
2. In situ STM imaging of high temperature oxygen etching of Si(111)(7 × 7) surfaces
3. Step-flow mechanism versus pit corrosion: scanning-tunneling microscopy observations on wet etching of Si(111) by HF solutions
4. Scanning-tunneling-microscopy study of the Si(111)-7×7 rest-atom layer following adatom removal by reaction with Cl
5. Scanning-tunneling-microscopy study of the Si(111)-7×7 rest-atom layer following adatom removal by reaction with Cl
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