Restricted Channel Migration in 2D Multilayer ReS2-Reference-Cited by-同舟云学术

Restricted Channel Migration in 2D Multilayer ReS2

Published:2021-04-16 Issue:16 Volume:13 Page:19016-19022
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Kim Chulmin¹,Sung Moonsoo¹,Kim Soo Yeon²,Lee Byung Chul¹,Kim Yeonsu¹,Kim Doyoon¹,Kim Yeeun³,Seo Youkyung³,Theodorou Christoforos⁴,Kim Gyu-Tae¹^ORCID,Joo Min-Kyu²⁵^ORCID

Affiliation:

1. School of Electrical Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea

2. Department of Applied Physics, Sookmyung Women’s University, Seoul 04310, Republic of Korea

3. Department of Physics, Sookmyung Women’s University, Seoul 04310, Republic of Korea

4. University Grenoble Alpes, University Savoie Mont Blanc, CNRS, Grenoble INP, IMEP-LAHC, F-38000 Grenoble, France

5. Institute of Advanced Materials and Systems, Sookmyung Women’s University, Seoul 04310, Republic of Korea

Funder

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.1c02111

Reference41 articles.

1. Advent of 2D Rhenium Disulfide (ReS 2 ): Fundamentals to Applications

2. Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene

3. Zinc–Bromine Batteries: High‐Energy Efficiency Membraneless Flowless Zn–Br Battery: Utilizing the Electrochemical–Chemical Growth of Polybromides (Adv. Mater. 52/2019)

4. All-2D ReS2 transistors with split gates for logic circuitry

5. Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling

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