Doping‐Induced Performance Improvement in ReS2 Field Effect Transistors: Exploring a Heterostructure with In2O3 Quantum Dots

Abstract

AbstractRhenium disulfide (ReS2) is a type of transition metal dichalcogenides (TMDs) that has potential electronic and photoelectrical applications. However, limited research has been conducted on improving its electrical properties and understanding the effect of doping on ReS2‐based devices. In this study, the enhanced electrical and photoelectrical performance of a 2D/0D heterostructure constructed by decorating the In2O3 quantum dots (QDs) on a multilayer ReS2 field‐effect transistor (FET) is reported. The In2O3 QDs are characterized by using a transmission electron microscope, optical absorption, and photoluminescence spectroscopy. The n‐doping effects with improved mobility are clearly observed, which is attributed to the electron transfer induced by the relatively high conduction band level of In2O3 QDs. Owing to the channel migration of ReS2 and traps at the ReS2/In2O3 QDs interface, additional performance improvements are observed, including reduced contact resistance, improved subthreshold swing, and increased photoresponsivity; however, the photoresponse speed is decreased. In summary, the findings suggest a novel mixed‐dimensional heterostructure for enhancing the performance of ReS2 transistors and provide insights into doping‐induced channel migration for 2D materials.