Atomically Thin Tin Monoxide-Based p-Channel Thin-Film Transistor and a Low-Power Complementary Inverter-Reference-Cited by-同舟云学术

Atomically Thin Tin Monoxide-Based p-Channel Thin-Film Transistor and a Low-Power Complementary Inverter

Published:2021-11-01 Issue:44 Volume:13 Page:52783-52792
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Huang Chi-Hsin¹^ORCID,Tang Yalun¹,Yang Tzu-Yi²,Chueh Yu-Lun²^ORCID,Nomura Kenji¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, University of California San Diego, 9500 German Drive, La Jolla, California 92093, United States

2. Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.1c15990

Reference50 articles.

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2. Graphene: Status and Prospects

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4. Van der Waals heterostructures

5. Heteroepitaxial Growth of Two-Dimensional Hexagonal Boron Nitride Templated by Graphene Edges

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