Unveiling the Origin of Robust Ferroelectricity in Sub-2 nm Hafnium Zirconium Oxide Films-Reference-Cited by-同舟云学术

Unveiling the Origin of Robust Ferroelectricity in Sub-2 nm Hafnium Zirconium Oxide Films

Published:2021-07-26 Issue:30 Volume:13 Page:36499-36506
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Lee Hyangsook¹²,Choe Duk-Hyun¹,Jo Sanghyun¹,Kim Jung-Hwa¹,Lee Hyun Hwi³,Shin Hyun-Joon³,Park Yeehyun²,Kang Seunghun²,Cho Yeonchoo¹,Park Seontae¹,Moon Taehwan¹,Eom Deokjoon²,Leem Mirine²,Kim Yunseok²^ORCID,Heo Jinseong¹,Lee Eunha¹,Kim Hyoungsub²⁴^ORCID

Affiliation:

1. Samsung Advanced Institute of Technology, Suwon 16678, Republic of Korea

2. School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea

3. Beamline Division, Pohang Accelerator Laboratory (PAL), Pohang 37673, Republic of Korea

4. SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.1c08718

Reference34 articles.