Induced Complementary Resistive Switching in Forming-Free TiOx/TiO2/TiOx Memristors-Reference-Cited by-同舟云学术

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Induced Complementary Resistive Switching in Forming-Free TiOx/TiO2/TiOx Memristors

Published:2021-08-31 Issue:36 Volume:13 Page:43022-43029
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Srivastava Saurabh¹²,Thomas Joseph Palathinkal¹^ORCID,Guan Xiaoyi¹,Leung Kam Tong¹^ORCID

Affiliation:

1. WATLab and Department of Chemistry, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1, Canada

2. Low Energy Electronics System (LEES), Singapore MIT Alliance for Research and Technology (SMART), 1 Create Way, Singapore 138602, Singapore

Funder

Natural Sciences and Engineering Research Council of Canada

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.1c09775

Reference42 articles.

1. Layered memristive and memcapacitive switches for printable electronics

2. Nanoscale cation motion in TaOx, HfOx and TiOx memristive systems

3. Training and operation of an integrated neuromorphic network based on metal-oxide memristors

4. Programmable, electroforming-free TiOx/TaOx heterojunction-based non-volatile memory devices

5. Novel Electroforming‐Free Nanoscaffold Memristor with Very High Uniformity, Tunability, and Density

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1. Enhancing reliability in oxide-based memristors using two-dimensional transition metal dichalcogenides;Applied Surface Science;2025-01

2. Voltage Sweep Direction-Dependent Memory Characteristics in an Organic Film;Journal of Electronic Materials;2024-09-03

3. Observation and characterization of titanium-like nano-filament in TiO2 memristor using superconducting electrode(s) and Andreev spectroscopy;Journal of Applied Physics;2024-08-05

4. A memristive-photoconductive transduction methodology for accurately nondestructive memory readout;Light: Science & Applications;2024-07-23

5. Epitaxial Growth of Two-Dimensional MoO₂–MoSe₂ Metal–Semiconductor Heterostructures for Schottky Diodes;Nano Letters;2024-06-17

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