Programmable, electroforming-free TiOx/TaOx heterojunction-based non-volatile memory devices-Reference-Cited by-同舟云学术

Programmable, electroforming-free TiOx/TaOx heterojunction-based non-volatile memory devices

Published:2019 Issue:39 Volume:11 Page:18159-18168
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Srivastava Saurabh¹²³⁴,Thomas Joseph Palathinkal¹²³⁴,Leung Kam Tong¹²³⁴^ORCID

Affiliation:

1. WATLab and Department of Chemistry

2. University of Waterloo

3. Waterloo

4. Canada

Abstract

A TiO_x/TaO_x heterojunction sandwiched between a pair of Pt electrodes provides an electroforming-free non-volatile memory device with a remarkably low programming voltage (+0.5 V), high endurance (10⁴ cycles) and data retention (10⁵ s).

Funder

Natural Sciences and Engineering Research Council of Canada

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2019/NR/C9NR06403F

Reference60 articles.

1. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

2. Memristive tri-stable resistive switching at ruptured conducting filaments of a Pt/TiO2/Pt cell

3. High-Performance Single-Active-Layer Memristor Based on an Ultrananocrystalline Oxygen-Deficient TiOx Film

4. Nanoscale cation motion in TaOx, HfOx and TiOx memristive systems

5. Continuous Electrical Tuning of the Chemical Composition of TaOx-Based Memristors

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A TaO_x/TiO_y Bilayer Memristor with Enhanced Synaptic Features for Neuromorphic Computing;Advanced Electronic Materials;2024-05-27

2. Recent advances in flexible memristors for advanced computing and sensing;Materials Horizons;2024

3. Effect of oxygen vacancies injection on the resistance switching properties of Hf0.5Zr0.5O2;Journal of Sol-Gel Science and Technology;2023-11-14

4. Oxide Memristors for ReRAM: Approaches, Characteristics, and Structures;Russian Microelectronics;2023-04

5. Drift speed adaptive memristor model;Neural Computing and Applications;2023-03-27