Self-Assembled Nanodielectrics for Solution-Processed Top-Gate Amorphous IGZO Thin-Film Transistors-Reference-Cited by-同舟云学术

Self-Assembled Nanodielectrics for Solution-Processed Top-Gate Amorphous IGZO Thin-Film Transistors

Published:2021-03-29 Issue:13 Volume:13 Page:15399-15408
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Stallings Katie¹,Smith Jeremy¹,Chen Yao¹^ORCID,Zeng Li²^ORCID,Wang Binghao¹^ORCID,Di Carlo Gabriele¹^ORCID,Bedzyk Michael J.³^ORCID,Facchetti Antonio¹⁴^ORCID,Marks Tobin J.¹⁵^ORCID

Affiliation:

1. Department of Chemistry and Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States

2. Applied Physics Program and the Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States

3. Department of Materials Science and Engineering, Applied Physics Program and the Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States

4. Flexterra Inc., 8025 Lamon Avenue, Skokie, Illinois 60077, United States

5. Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States

Funder

Air Force Office of Scientific Research

Office of Naval Research

Northwestern University

National Science Foundation

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

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