Amorphous InGaZnO and metal oxide semiconductor devices: an overview and current status-Reference-Cited by-同舟云学术

Amorphous InGaZnO and metal oxide semiconductor devices: an overview and current status

Published:2019 Issue:40 Volume:7 Page:12388-12414
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Troughton Joe¹²³⁴^ORCID,Atkinson Del¹²³⁴^ORCID

Affiliation:

1. Department of Physics

2. Durham University

3. Durham

4. UK

Abstract

This review covers the history, development, and state of the art, of metal oxide-based electronics, with particularly focus of indium-gallium-zinc-oxide.

Funder

Innovate UK

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/TC/C9TC03933C

Reference387 articles.

1. Present status of amorphous In–Ga–Zn–O thin-film transistors

2. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

3. iNEMI Technology Roadmaps 2015 , inemi technical report, 2015

4. Review of recent developments in amorphous oxide semiconductor thin-film transistor devices

5. Metal oxide semiconductor thin-film transistors for flexible electronics

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