Expeditiously Crystallized Pure Orthorhombic-Hf0.5Zr0.5O2 for Negative Capacitance Field Effect Transistors-Reference-Cited by-同舟云学术

Expeditiously Crystallized Pure Orthorhombic-Hf0.5Zr0.5O2 for Negative Capacitance Field Effect Transistors

Published:2021-12-13 Issue:50 Volume:13 Page:60250-60260
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Cho Haewon¹,Pujar Pavan¹^ORCID,Choi Minsu²,Naqi Muhammad¹,Cho Yongin¹,Rho Hyun Yeol¹,Lee Jaichan²^ORCID,Kim Sunkook¹^ORCID

Affiliation:

1. Multifunctional Nano Bio Electronics Lab, School of Advanced Materials Science and Engineering, Sungkyunkwan University, Gyeonggi-do, Suwon 16419, South Korea

2. Emergent Materials Design Lab, School of Advanced Materials Science and Engineering, Sungkyunkwan University, Gyeonggi-do, Suwon 16419, South Korea

Funder

National Research Foundation of Korea

Ministry of Science and ICT, South Korea

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.1c21387

Reference54 articles.

1. A critical review of recent progress on negative capacitance field-effect transistors

2. Steep switching devices for low power applications: negative differential capacitance/resistance field effect transistors