Ab Initio Study of Hexagonal Boron Nitride as the Tunnel Barrier in Magnetic Tunnel Junctions
Author:
Affiliation:
1. School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
2. Engineering Department, Cambridge University, Cambridge CB2 1PZ, U.K.
3. School of Engineering, Swansea University, Swansea SA1 8EN, U.K.
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.1c13583
Reference59 articles.
1. Scaling magnetic tunnel junction down to single-digit nanometers—Challenges and prospects
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3. Giant tunnel magnetoresistance in magnetic tunnel junctions with a crystalline MgO(0 0 1) barrier
4. Dependence of Giant Tunnel Magnetoresistance of Sputtered CoFeB/MgO/CoFeB Magnetic Tunnel Junctions on MgO Barrier Thickness and Annealing Temperature
5. Current-induced magnetization reversal in nanopillars with perpendicular anisotropy
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