Ultra-thin van der Waals magnetic tunnel junction based on monoatomic boron vacancy of hexagonal boron nitride-Reference-Cited by-同舟云学术

Ultra-thin van der Waals magnetic tunnel junction based on monoatomic boron vacancy of hexagonal boron nitride

Author:

Harfah Halimah¹^ORCID,Wicaksono Yusuf²^ORCID,Sunnardianto Gagus Ketut³⁴⁵,Majidi Muhammad Aziz⁶,Kusakabe Koichi⁷

Affiliation:

1. Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-Cho, Toyonaka, Osaka 560-0043, Japan

2. RIKEN Cluster for Pioneering Research (CPR), 2-1 Hirosawa, Wako, Saitama 351-0198, Japan

3. Research Center for Quantum Physics, National Research and Innovation Agency (BRIN), Tangerang Selatan, Banten, 15314, Indonesia

4. Research Collaboration Center for Quantum Technology 2.0, Bandung 40132, Indonesia

5. School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore

6. Department of Physics, Faculty of Mathematics and Natural Sciences, Universitas Indonesia, Kampus UI Depok, Depok 16424, Indonesia

7. School of Science, Graduate School of Science, University of Hyogo, 3-2-1 Kouto, Kamigori-cho, Ako-gun, 678-1297, Hyogo, Japan

Abstract

Enhanced spin control in graphene/hBN MTJ: boron vacancy tuning yields high TMR ratio of 400%, paving the way for ultra-thin spin valves.

Funder

Japan Society for the Promotion of Science

Publisher

Royal Society of Chemistry (RSC)

Link

Reference52 articles.