Reduction of Persistent Photoconduction with IGZO/ZnON-Tandem-Structure Visible–Near-Infrared Phototransistors-Reference-Cited by-同舟云学术

Reduction of Persistent Photoconduction with IGZO/ZnON-Tandem-Structure Visible–Near-Infrared Phototransistors

Published:2021-04-12 Issue:15 Volume:13 Page:17827-17834
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Lee Hyun-Mo¹,Kim Yoon-Seo¹,Rim You Seung²^ORCID,Park Jin-Seong¹^ORCID

Affiliation:

1. Division of Materials Science and Engineering, Hanyang University, 222, Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea

2. Department of Intelligent Mechatronics Engineering and Convergence Engineering for Intelligent Drone, Sejong University, 209 Neungdong-ro, Gwangjin-gu, Seoul 05006, Republic of Korea

Funder

National Research Foundation of Korea

Institute for Information and Communications Technology Promotion

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.1c02593

Reference27 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Metal Oxide Thin Film Phototransistor for Remote Touch Interactive Displays

3. Flexible and High-Performance Amorphous Indium Zinc Oxide Thin-Film Transistor Using Low-Temperature Atomic Layer Deposition

4. Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays

5. Amorphous Oxide Semiconductor TFTs for Displays and Imaging

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