Electron Doping Effect in the Resistive Switching Properties of Al/Gd1–xCaxMnO3/Au Memristor Devices
Author:
Affiliation:
1. Wihuri Physical Laboratory, Department of Physics and Astronomy, University of Turku, FI-20014 Turku, Finland
Funder
Turun Yliopisto
Jenny ja Antti Wihurin Rahasto
Academy of Finland
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.1c02963
Reference45 articles.
1. Resistive switching in transition metal oxides
2. Highly Improved Uniformity in the Resistive Switching Parameters of TiO2Thin Films by Inserting Ru Nanodots
3. Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
4. Electronic synapses made of layered two-dimensional materials
5. Resistive switching at the high quality metal/insulator interface in Fe3O4/SiO2/α-FeSi2/Si stacking structure
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