Rational Design on Controllable Cation Injection with Improved Conductive-Bridge Random Access Memory by Glancing Angle Deposition Technology toward Neuromorphic Application-Reference-Cited by-同舟云学术

Rational Design on Controllable Cation Injection with Improved Conductive-Bridge Random Access Memory by Glancing Angle Deposition Technology toward Neuromorphic Application

Published:2021-11-14 Issue:46 Volume:13 Page:55470-55480
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Shih Yu-Chuan¹²³,Shen Ying-Chun¹²³,Cheng Yen-Kai¹²³,Chaudhary Mayur¹²³,Yang Tzu-Yi¹²³,Yu Yi-Jen⁴,Chueh Yu-Lun¹²³^ORCID

Affiliation:

1. Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan

2. Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University, Hsinchu 30013, Taiwan

3. Department of Physics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan

4. Instrument Center, National Tsing Hua University, Hsinchu 30013, Taiwan

Funder

Ministry of Science and Technology

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.1c18101

Reference56 articles.

1. Memristive devices for computing

2. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

3. Atomic Switch: Atom/Ion Movement Controlled Devices for Beyond Von-Neumann Computers

4. Electrochemical metallization cells—blending nanoionics into nanoelectronics?

5. Zahurak, J.; Miyata, K.; Fischer, M.; Balakrishnan, M.; Chhajed, S.; Wells, D.; Li, H.; Torsi, A.; Lim, J.; Korber, M.; Nakazawa, K.; Mayuzumi, S.; Honda, M.; Sills, S.; Yasuda, S.; Calderoni, A.; Cook, B.; Damarla, G.; Tran, H.; Wang, B.; Cardon, C.; Karda, K.; Okuno, J.; Johnson, A.; Kunihiro, T.; Sumino, J.; Tsukamoto, M.; Aratani, K.; Ramaswamy, N.; Otsuka, W.; Prall, K. Process Integration of a 27nm,16Gb Cu ReRAM. IEEE International Electron Devices Meeting, 2014; pp 6.2.1–6.2.4.

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Deterministic Formation of Conductive Filaments in Resistive Memories With Cavities Formed by Nanosphere Templates;IEEE Electron Device Letters;2024-08

2. Effective Conduction Path of a C₆₀ Chain in a Nanogap Electrode;ACS Applied Electronic Materials;2024-02-26

3. HfO_x-Based Conductive Bridge Random Access Memory with Al₂O₃ Sandglass Nanostructures via Glancing Angle Deposition Technology toward Neuromorphic Applications;ACS Applied Nano Materials;2023-05-18

4. Ultralow Set Voltage and Enhanced Switching Reliability for Resistive Random-Access Memory Enabled by an Electrodeposited Nanocone Array;ACS Applied Materials & Interfaces;2022-05-23