Study on the Formation of Self-Assembled Monolayers on Sol−Gel Processed Hafnium Oxide as Dielectric Layers-Reference-Cited by-同舟云学术

Study on the Formation of Self-Assembled Monolayers on Sol−Gel Processed Hafnium Oxide as Dielectric Layers

Published:2009-01-07 Issue:4 Volume:25 Page:2140-2147
ISSN:0743-7463
Container-title:Langmuir
language:en
Short-container-title:Langmuir

Author:

Ting Guy G.¹,Acton Orb¹,Ma Hong¹,Ka Jae Won¹,Jen Alex K.-Y.¹

Affiliation:

1. Department of Chemistry, University of Washington, Box 351700, Seattle, Washington 98195-1700, and Department of Materials Science and Engineering, Box 352120, University of Washington, Seattle, Washington 98195-2120

Publisher

American Chemical Society (ACS)

Subject

Electrochemistry,Spectroscopy,Surfaces and Interfaces,Condensed Matter Physics,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/la802944n

Reference57 articles.

1. High dielectric constant gate oxides for metal oxide Si transistors

2. Optimization of precursor pulse time in improving bulk trapping characteristics of atomic-layer-deposition HfO2 gate oxides

3. Sol−Gel Fabrication of Dielectric HfO2 Nano-Films; Formation of Uniform, Void-Free Layers and Their Superior Electrical Properties

4. Gate Dielectrics for Organic Field-Effect Transistors: New Opportunities for Organic Electronics

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