Sol−Gel Fabrication of Dielectric HfO2 Nano-Films; Formation of Uniform, Void-Free Layers and Their Superior Electrical Properties-Reference-Cited by-同舟云学术

Sol−Gel Fabrication of Dielectric HfO2 Nano-Films; Formation of Uniform, Void-Free Layers and Their Superior Electrical Properties

Published:2004-12-31 Issue:2 Volume:17 Page:450-458
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Aoki Yoshitaka¹,Kunitake Toyoki¹,Nakao Aiko¹

Affiliation:

1. Topochemical Design Laboratory, Frontier Research System, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan, and Surface Analysis Laboratory, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cm048971r

Reference28 articles.

1. A Surface Sol−Gel Process of TiO2 and Other Metal Oxide Films with Molecular Precision

2. Stepwise Adsorption of Metal Alkoxides on Hydrolyzed Surfaces : A Surface Sol-Gel Process

3. Solution-based Fabrication of High-κ Gate Dielectrics for Next-Generation Metal-Oxide Semiconductor Transistors

4. High-κ gate dielectrics: Current status and materials properties considerations

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