Self-Assembled Growth of Ga Droplets on GaAs(001): Role of Surface Reconstructions
Author:
Affiliation:
1. National Institute for Materials Science (NIMS), Tsukuba 305-0044, Japan
2. Department of Engineering Science, The University of Electro-Communications (UEC-Tokyo), Chofu, Tokyo 182-8585, Japan
Publisher
American Chemical Society (ACS)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/cg500355f
Reference33 articles.
1. New MBE growth method for InSb quantum well boxes
2. High-density GaAs/AlGaAs quantum dots formed on GaAs (311)A substrates by droplet epitaxy
3. Self-Assembly of Symmetric GaAs Quantum Dots on (111)A Substrates: Suppression of Fine-Structure Splitting
4. Extremely high-density GaAs quantum dots grown by droplet epitaxy
5. Regimes of GaAs quantum dot self-assembly by droplet epitaxy
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