Self-Assembly of Symmetric GaAs Quantum Dots on (111)A Substrates: Suppression of Fine-Structure Splitting-Reference-Cited by-同舟云学术

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Self-Assembly of Symmetric GaAs Quantum Dots on (111)A Substrates: Suppression of Fine-Structure Splitting

Published:2010-05-28 Issue:6 Volume:3 Page:065203
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Mano Takaaki,Abbarchi Marco,Kuroda Takashi,McSkimming Brian,Ohtake Akihiro,Mitsuishi Kazutaka,Sakoda Kazuaki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/3/i=6/a=065203/pdf

Reference19 articles.

1. Regulated and Entangled Photons from a Single Quantum Dot

2. Size-Dependent Fine-Structure Splitting in Self-OrganizedInAs/GaAsQuantum Dots

3. Control of fine-structure splitting and biexciton binding inInxGa1−xAsquantum dots by annealing

4. Influence of an in-plane electric field on exciton fine structure in InAs-GaAs self-assembled quantum dots

5. A semiconductor source of triggered entangled photon pairs

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1. Local droplet etching of a vicinal InGaAs(111)A metamorphic layer;Applied Surface Science;2024-10

2. Lattice‐Mismatched Epitaxy of InAs on (111)A‐Oriented Substrate: Metamorphic Layer Growth and Self‐Assembly of Quantum Dots;physica status solidi (a);2024-01-10

3. 波长可调的量子点纠缠光源（特邀）;ACTA PHOTONICA SINICA;2024

4. Electronic properties of semiconductor nanostructures: Symmetry, exchange, and correlation effects;Quantum Photonics;2024

5. Effects of random alloy disorder, shape deformation, and substrate misorientation on the exciton lifetime and fine structure splitting of GaAs/AlxGa1−xAs (111) quantum dots;Physical Review B;2023-05-24

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