Correlation of Electrical and Structural Properties of Single As-Grown GaAs Nanowires on Si (111) Substrates-Reference-Cited by-同舟云学术

Correlation of Electrical and Structural Properties of Single As-Grown GaAs Nanowires on Si (111) Substrates

Published:2015-01-29 Issue:2 Volume:15 Page:981-989
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Bussone Genziana¹²,Schäfer-Eberwein Heiko³,Dimakis Emmanouil⁴⁵,Biermanns Andreas²,Carbone Dina¹,Tahraoui Abbes⁴,Geelhaar Lutz⁴,Haring Bolívar Peter³,Schülli Tobias U.¹,Pietsch Ullrich²

Affiliation:

1. ESRF - The European Synchrotron, 38043 Grenoble, France

2. Festkörperphysik, Universität Siegen, 57068 Siegen, Germany

3. Hochfrequenztechnik & Quantenelektronik, Universität Siegen, 57068 Siegen, Germany

4. Paul-Drude-Institut für Festkörperelektronik, 10117 Berlin, Germany

5. Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, 01328 Dresden, Germany

Funder

Deutsche Forschungsgemeinschaft

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl5037879

Reference41 articles.

1. Single-nanowire solar cells beyond the Shockley–Queisser limit

2. A III–V nanowire channel on silicon for high-performance vertical transistors

3. Single-nanowire electrically driven lasers

4. Structural and optical properties of high quality zinc-blende/wurtzite GaAs nanowire heterostructures

5. Transport characterization in nanowires using an electrical nanoprobe

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