Impact of Electrical Current on Single GaAs Nanowire Structure-Reference-Cited by-同舟云学术

Impact of Electrical Current on Single GaAs Nanowire Structure

Published:2021-05-29 Issue:8 Volume:258 Page:2100056
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Bahrami Danial¹,AlHassan Ali¹,Davtyan Arman¹,Zhe Ren²,Anjum Taseer¹,Herranz Jesús³,Geelhaar Lutz³,Novikov Dmitri V.⁴,Timm Rainer²,Pietsch Ullrich¹^ORCID

Affiliation:

1. Physik Department Naturwissenschaftlich-Technische Fakultät der Universität Siegen Siegen 57068 Germany

2. Department of Physics and NanoLund Lund University Lund 221 00 Sweden

3. Paul-Drude-Institut für Festkörperelektronik Leibniz-Institut im Forschungsverbund Berlin e.V. Hausvogteiplatz 5-7 Berlin 10117 Germany

4. PETRA III Deutsches Elektronen-Synchrotron DESY Hamburg 22607 Germany

Funder

Deutsche Forschungsgemeinschaft

Bundesministerium für Bildung und Forschung

Stiftelsen för Strategisk Forskning

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.202100056

Reference34 articles.

1. Indium arsenide: a semiconductor for high speed and electro-optical devices

2. Single-nanowire solar cells beyond the Shockley–Queisser limit

3. A III–V nanowire channel on silicon for high-performance vertical transistors

4. Single-nanowire electrically driven lasers

5. Nanowire photonics

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