Design of an Interfacial Layer to Block Chemical Reaction for Epitaxial ZnO Growth on a Si Substrate-Reference-Cited by-同舟云学术

Design of an Interfacial Layer to Block Chemical Reaction for Epitaxial ZnO Growth on a Si Substrate

Published:2011-05-13 Issue:6 Volume:11 Page:2438-2443
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Yu Hak Ki¹,Baik Jeong Min²,Lee Jong-Lam¹

Affiliation:

1. Division of Advanced Materials Science and Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Gyungbuk 790-784, Korea

2. School of Mechanical and Advanced Materials Engineering, Ulsan National Institute of Science & Technology (UNIST), Ulsan 689-805, Korea

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cg200203s

Reference21 articles.

1. Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO

2. Epitaxial growth of ZnO films on Si substrates using an epitaxial GaN buffer

3. Reduced defect densities in the ZnO epilayer grown on Si substrates by laser-assisted molecular-beam epitaxy using a ZnS epitaxial buffer layer

4. Magnetic and optical properties of Cr+-implanted GaN

5. Domain Matching Epitaxial Growth of High-Quality ZnO Film Using a Y2O3 Buffer Layer on Si (111)

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