Domain Matching Epitaxial Growth of High-Quality ZnO Film Using a Y2O3 Buffer Layer on Si (111)-Reference-Cited by-同舟云学术

Domain Matching Epitaxial Growth of High-Quality ZnO Film Using a Y2O3 Buffer Layer on Si (111)

Published:2008-11-19 Issue:1 Volume:9 Page:239-242
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Liu W.-R.¹,Li Y.-H.¹,Hsieh W. F.¹,Hsu C.-H.¹,Lee W. C.¹,Lee Y. J.¹,Hong M.¹,Kwo J.¹

Affiliation:

1. Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan, Research Division, National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan, and Department of Materials Science & Engineering and Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cg8003849

Reference21 articles.

1. Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO

2. V defects of ZnO thin films grown on Si as an ultraviolet optical path

3. Epitaxial growth of ZnO films on Si substrates using an epitaxial GaN buffer

4. The substrate effect on the in-plane orientation of vertically well-aligned ZnO nanorods grown on ZnO buffer layers

5. Low-temperature interface engineering for high-quality ZnO epitaxy on Si(111) substrate

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