Pulsed heating atomic layer deposition (PH-ALD) for epitaxial growth of zinc oxide thin films on c-plane sapphire-Reference-Cited by-同舟云学术

Pulsed heating atomic layer deposition (PH-ALD) for epitaxial growth of zinc oxide thin films on c-plane sapphire

Published:2022 Issue:1 Volume:51 Page:303-311
ISSN:1477-9226
Container-title:Dalton Transactions
language:en
Short-container-title:Dalton Trans.

Author:

Piercy Brandon D.¹^ORCID,Wooding Jamie P.¹^ORCID,Gregory Shawn A.¹^ORCID,Losego Mark D.¹^ORCID

Affiliation:

1. School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, USA

Abstract

High-temperature heat pulses interleaved with ALD cycling enables the growth of heteroepitaxial ZnO on c-plane sapphire substrates. This “pulsed-heating” ALD separates the chemistry delivery process from the material’s structural crystallization.

Funder

National Defense Science and Engineering Graduate

National Science Foundation

Link Foundation

Publisher

Royal Society of Chemistry (RSC)

Subject

Inorganic Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/DT/D1DT03581A

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