Reduced defect densities in the ZnO epilayer grown on Si substrates by laser-assisted molecular-beam epitaxy using a ZnS epitaxial buffer layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1832734
Reference19 articles.
1. The exciton spectrum of zinc oxide
2. Luminescent properties of ZnO thin films grown epitaxially on Si substrate
3. Growth of Epitaxial ZnO Thin Film by Oxidation of Epitaxial ZnS Film on Si(111) Substrate
4. High temperature growth of ZnS films on bare Si and transformation of ZnS to ZnO by thermal oxidation
5. High temperature growth of ZnS films on bare Si and transformation of ZnS to ZnO by thermal oxidation
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