Pore Structure of Porous Silicon Formed on a Lightly Doped Crystal Silicon-Reference-Cited by-同舟云学术

Pore Structure of Porous Silicon Formed on a Lightly Doped Crystal Silicon

Published:1996-01-01 Issue:20 Volume:12 Page:4828-4831
ISSN:0743-7463
Container-title:Langmuir
language:en
Short-container-title:Langmuir

Author:

Ruike M.¹,Houzouji M.¹,Motohashi A.¹,Murase N.¹,Kinoshita A.¹,Kaneko K.¹

Affiliation:

1. Faculty of Science and Engineering, Tokyo Denki University, Hatoyama, Hiki-gun, Saitama 350-03, Japan, and Department of Chemistry, Faculty of Science, Chiba University, 1-33 Yayoi, Inage, Chiba 263, Japan

Publisher

American Chemical Society (ACS)

Subject

Electrochemistry,Spectroscopy,Surfaces and Interfaces,Condensed Matter Physics,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/la960185g

Reference19 articles.

1. Electrolytic Shaping of Germanium and Silicon

2. Electropolishing Silicon in Hydrofluoric Acid Solutions

3. X-ray topographic characterization of porous silicon layers

4. Determination of lattice parameter and elastic properties of porous silicon by X-ray diffraction

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