Synthesis and Characterization of Atomically Flat Methyl-Terminated Ge(111) Surfaces-Reference-Cited by-同舟云学术

Synthesis and Characterization of Atomically Flat Methyl-Terminated Ge(111) Surfaces

Published:2015-07-08 Issue:28 Volume:137 Page:9006-9014
ISSN:0002-7863
Container-title:Journal of the American Chemical Society
language:en
Short-container-title:J. Am. Chem. Soc.

Author:

Wong Keith T.¹,Kim Youn-Geun¹,Soriaga Manuel P.¹,Brunschwig Bruce S.¹,Lewis Nathan S.¹

Affiliation:

1. Division of Chemistry and Chemical Engineering, ‡Joint Center for Artificial Photosynthesis, §Beckman Institute, and ∥Kavli Nanoscience Institute, California Institute of Technology, Pasadena, California 91125, United States

Funder

Office of Science

Gordon and Betty Moore Foundation

Division of Chemistry

Publisher

American Chemical Society (ACS)

Subject

Colloid and Surface Chemistry,Biochemistry,General Chemistry,Catalysis

Link

https://pubs.acs.org/doi/pdf/10.1021/jacs.5b03339

Reference40 articles.

1. Hafnium oxide gate dielectrics on sulfur-passivated germanium

2. Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance

3. Hole mobility enhancement of p-MOSFETs using global and local Ge-channel technologies

4. 40% efficient metamorphic GaInP∕GaInAs∕Ge multijunction solar cells

5. Current-matched triple-junction solar cell reaching 41.1% conversion efficiency under concentrated sunlight

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