Hole mobility enhancement of p-MOSFETs using global and local Ge-channel technologies-Reference-Cited by-同舟云学术

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Hole mobility enhancement of p-MOSFETs using global and local Ge-channel technologies

Published:2006-12 Issue:3 Volume:135 Page:250-255
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Takagi Shinichi,Tezuka T.,Irisawa T.,Nakaharai S.,Maeda T.,Numata T.,Ikeda K.,Sugiyama N.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference21 articles.

1. Performance enhancement of partially- and fufly-depleted strained-SOI MOSFETs and characterization of strained-Si device parameters

2. Performance enhancement of partially and fully depleted strained-SOI MOSFETs

3. Key differences for process-induced uniaxial vs. substrate-induced biaxial stressed Si and Ge channel MOSFETs

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1. Characterization of ultrathin-body Germanium-on-insulator (GeOI) structures and MOSFETs on flipped Smart-Cut™ GeOI substrates;Solid-State Electronics;2016-01

2. Impact of back interface passivation on electrical properties of ultrathin-body Germanium-on-insulator (GeOI) MOSFETs;Microelectronic Engineering;2015-11

3. Synthesis and Characterization of Atomically Flat Methyl-Terminated Ge(111) Surfaces;Journal of the American Chemical Society;2015-07-08

4. Ge Condensation and Its Device Application;Photonics and Electronics with Germanium;2015-05-08

5. Hole mobility enhancements in strained InxGa1−xSb heterostructure p-channel MOSFETs;Japanese Journal of Applied Physics;2015-03-09

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