Raman Studies of Carbon-Doped GaAs Layers Grown by a Metallic-Arsenic-Based Metalorganic Chemical Vapor Deposition System-Reference-Cited by-同舟云学术

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Raman Studies of Carbon-Doped GaAs Layers Grown by a Metallic-Arsenic-Based Metalorganic Chemical Vapor Deposition System

Published:2008-01-17 Issue:2 Volume:8 Page:704-706
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Delgado-Macuil R.,Rojas-López M.,Díaz-Reyes J.,Galván-Arellano M.,Peña-Sierra R.

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cg0607452

Reference20 articles.

1. Carbon diffusion in undoped,n‐type, andp‐type GaAs

2. Metallic p-type GaAs and GaAlAs grown by metalorganic molecular beam epitaxy

3. Al–Ga interdiffusion, carbon acceptor diffusion, and hole reduction in carbon‐doped Al0.4Ga0.6As/GaAs superlattices: The As4pressure effect

4. Relation between the substitutional fraction and electrical activation of carbon in heavily C-ion implanted GaAs

5. Observation of the Interaction of Plasmons with Longitudinal Optical Phonons in GaAs

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Micro-Raman analysis of GaAs Schottky barrier solar cell;Journal of Raman Spectroscopy;2011-03

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