Micro-Raman analysis of GaAs Schottky barrier solar cell-Reference-Cited by-同舟云学术

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Micro-Raman analysis of GaAs Schottky barrier solar cell

Published:2011-03 Issue:3 Volume:42 Page:422-428
ISSN:0377-0486
Container-title:Journal of Raman Spectroscopy
language:en
Short-container-title:J. Raman Spectrosc.

Author:

Jothilakshmi R.,Ramakrishnan V.,Kumar J.,Sarua Andrei,Kuball Martin

Funder

Great Western Research

Publisher

Wiley

Subject

Spectroscopy,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/jrs.2710/fullpdf

Reference31 articles.

1. A study of the relationship between junction depth and GaAs solar cell performance under a 1 MeV electron fluence

2. Effect of hydrostatic pressure on the characteristic parameters of Au/n-GaAs Schottky-barrier diodes

3. Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Raman Scattering;Handbook of Advanced Nondestructive Evaluation;2019

2. Raman Scattering;Handbook of Advanced Non-Destructive Evaluation;2018

3. Recent advances in linear and nonlinear Raman spectroscopy. Part VI;Journal of Raman Spectroscopy;2012-12

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