Effect of hydrostatic pressure on the characteristic parameters of Au/n-GaAs Schottky-barrier diodes
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.60.15944/fulltext
Reference24 articles.
1. Reactivity and interface chemistry during Schottky‐barrier formations: Metals on thin native oxides of GaAs investigated by x‐ray photoelectron spectroscopy
2. Photovoltaic effects in semi−insulating GaAs
3. Uniaxial Stress Effect of Ge pn Junctions Doped with Copper
Cited by 24 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Theoretical approach to thermal sensitivity capability of metal-semiconductor diodes with different Schottky contact area;Journal of Vacuum Science & Technology B;2023-09-26
2. Simultaneous effect of impurities, hydrostatic pressure, and applied potential on the optical absorptions in a GaAs field-effect transistor;Results in Physics;2019-12
3. The Role of Hydrostatic Pressure in Electrical Properties of Au/n-GaAs Schottky diodes with Substituted Polyaniline Interfacial Layer;Acta Physica Polonica A;2017-09
4. Electrical characterization of metal/diamond-like carbon/inorganic semiconductor MIS Schottky barrier diodes;Microelectronic Engineering;2015-06
5. Electronic structure computation and differential capacitance profile in δ-doped FET as a function of hydrostatic pressure;AIP Conference Proceedings;2014
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3