Effects of Nitrogen Incorporation in HfO2 Grown on InP by Atomic Layer Deposition: An Evolution in Structural, Chemical, and Electrical Characteristics-Reference-Cited by-同舟云学术

Effects of Nitrogen Incorporation in HfO2 Grown on InP by Atomic Layer Deposition: An Evolution in Structural, Chemical, and Electrical Characteristics

Published:2014-03-12 Issue:6 Volume:6 Page:3896-3906
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Kang Yu-Seon¹,Kim Dae-Kyoung¹,Kang Hang-Kyu¹,Jeong Kwang-Sik¹,Cho Mann-Ho¹,Ko Dae-Hong²,Kim Hyoungsub³,Seo Jung-Hye⁴,Kim Dong-Chan⁵

Affiliation:

1. Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, Korea

2. Department of Material Science and Engineering, Yonsei University, Seoul 120-749, Korea

3. School Department of Material Science and Engineering, Sungkyunkwan University, Suwon 440-746, Korea

4. Analysis and Research Division, Korea Basic Science Institute, Daejeon 305-806, Korea

5. Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., Yongin 446-711, Korea

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/am4049496

Reference21 articles.

1. Band offsets of high K gate oxides on high mobility semiconductors

2. Self-aligned n-channel metal-oxide-semiconductor field effect transistor on high-indium-content In0.53Ga0.47As and InP using physical vapor deposition HfO2 and silicon interface passivation layer

3. In situ study of HfO2 atomic layer deposition on InP(100)

4. Thickness dependence on crystalline structure and interfacial reactions in HfO2 films on InP (001) grown by atomic layer deposition

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