Indium Diffusion Behavior and Application in HfO 2 ‐Based Conductive Bridge Random Access Memory-Reference-Cited by-同舟云学术

Indium Diffusion Behavior and Application in HfO 2 ‐Based Conductive Bridge Random Access Memory

Published:2019-08-14 Issue:11 Volume:13 Page:1900285
ISSN:1862-6254
Container-title:physica status solidi (RRL) – Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Zheng Hao-Xuan¹,Shih Chih-Cheng¹,Chang Ting-Chang¹^ORCID,Shih Lin-Yi²,Shih Yao-Kai³,Tseng Yi-Ting¹,Chen Wen-Chung²,Huang Wei-Chen¹,Yang Chih-Cheng²,Wu Pei-Yu²,Huang Hui-Chun²,Tsai Tsung-Ming²,Sze Simon M.⁴

Affiliation:

1. Department of PhysicsNational Sun Yat-sen University 70 Lien-hai Road Kaohsiung 80424 Taiwan R.O.C.

2. Department of Materials and Optoelectronic ScienceNational Sun Yat-sen University 70 Lien-hai Road Kaohsiung 80424 Taiwan R.O.C.

3. Department of Electronic EngineeringNational Kaohsiung University of Science and Technology Kaohsiung 824 Taiwan R.O.C.

4. Department of Electronics Engineering and Institute of ElectronicsNational Chiao Tung University Hsinchu 300 Taiwan R.O.C.

Funder

Ministry of Science and Technology, Taiwan

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.201900285

Reference29 articles.

1. Resistive switching in transition metal oxides

2. Resistive switching memories based on metal oxides: mechanisms, reliability and scaling

3. Physical and chemical mechanisms in oxide-based resistance random access memory

4. Resistance random access memory

5. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

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