Segregation of In to Dislocations in InGaN-Reference-Cited by-同舟云学术

Segregation of In to Dislocations in InGaN

Published:2015-01-21 Issue:2 Volume:15 Page:923-930
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Horton Matthew K.¹,Rhode Sneha²,Sahonta Suman-Lata²,Kappers Menno J.²,Haigh Sarah J.³,Pennycook Timothy J.⁴⁵,Humphreys Colin J.²,Dusane Rajiv O.⁶,Moram Michelle A.¹

Affiliation:

1. Department of Materials, Imperial College London, Exhibition Road, London SW7 2AZ, United Kingdom

2. Department of Materials Science and Metallurgy, University of Cambridge, Charles Babbage Road, Cambridge, CB3 0FS, United Kingdom.

3. School of Materials, University of Manchester, Manchester, M13 9PL, United Kingdom

4. SuperSTEM, STFC Daresbury Laboratories, Warrington, WA4 4AD, United Kingdom

5. Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom

6. Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Mumbai, 400076, India

Funder

Defense Threat Reduction Agency

Engineering and Physical Sciences Research Council

Royal Society

Cambridge Commonwealth Trust

Indian Institute of Technology Bombay

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl5036513

Reference64 articles.

1. Dislocations and their reduction in GaN

2. Effect of dislocation density on efficiency droop in GaInN∕GaN light-emitting diodes

3. Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop

4. Direct imaging of reverse-bias leakage through pure screw dislocations in GaN films grown by molecular beam epitaxy on GaN templates

5. Advances in group III-nitride-based deep UV light-emitting diode technology

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