Single-Impurity Scattering and Carrier Mobility in Doped Ge/Si Core−Shell Nanowires-Reference-Cited by-同舟云学术

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Single-Impurity Scattering and Carrier Mobility in Doped Ge/Si Core−Shell Nanowires

Published:2010-05-25 Issue:6 Volume:10 Page:2207-2210
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Lee Hyungjun¹,Choi Hyoung Joon¹

Affiliation:

1. Department of Physics and IPAP, Yonsei University, Seoul 120-749, Republic of Korea

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl101109p

Reference22 articles.

1. Semiconductor nanowires

2. Wolf, S.; Tauber, R. N.Silicon Processing for the VLSI Era;Lattice Press:Sunset Beach, CA, 1986; Vols. 1,2.

3. Measurement of Carrier Mobility in Silicon Nanowires

4. Measuring the Capacitance of Individual Semiconductor Nanowires for Carrier Mobility Assessment

5. One-dimensional hole gas in germanium/silicon nanowire heterostructures

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