Measuring the Capacitance of Individual Semiconductor Nanowires for Carrier Mobility Assessment-Reference-Cited by-同舟云学术

Measuring the Capacitance of Individual Semiconductor Nanowires for Carrier Mobility Assessment

Published:2007-05-08 Issue:6 Volume:7 Page:1561-1565
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Tu Ryan¹,Zhang Li¹,Nishi Yoshio¹,Dai Hongjie¹

Affiliation:

1. Department of Chemistry and Laboratory for Advanced Materials, Stanford University, Stanford, California 94305, Department of Electrical Engineering, Stanford University, Stanford, California 94305, and Department of Materials Science and Engineering, Stanford University, Stanford, California 94305

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl070378w

Reference17 articles.

1. Ge/Si nanowire heterostructures as high-performance field-effect transistors

2. Nanowire-based one-dimensional electronics

3. Essential physics of carrier transport in nanoscale MOSFETs

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