Roughening transition as a driving factor in the formation of self-ordered one-dimensional nanostructures-Reference-Cited by-同舟云学术

Roughening transition as a driving factor in the formation of self-ordered one-dimensional nanostructures

Published:2021 Issue:8 Volume:23 Page:1836-1848
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Gorshkov Vyacheslav N.¹²³⁴⁵^ORCID,Tereshchuk Vladimir V.¹²³,Sareh Pooya⁶⁷⁸⁹¹⁰^ORCID

Affiliation:

1. National Technical University of Ukraine, Igor Sikorsky Kyiv Polytechnic Institute

2. Kiev 03056

3. Ukraine

4. Center for Advanced Materials Processing

5. Departments of Chemistry and Physics

6. Creative Design Engineering Lab (Cdel)

7. Department of Mechanical

8. Materials, and Aerospace Engineering

9. School of Engineering

10. University of Liverpool

Abstract

Peculiar scenarios in the dynamics of BCC and FCC 1D-nanostructures leading to the formation of ultra-short, and sometimes stable, high-amplitude surface modulations are analysed and the means of achieving the desired periodicity are discussed.

Funder

Ministry of Education and Science of Ukraine

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/CE/D0CE01404D

Reference81 articles.

1. Single crystalline ultrathin gold nanowires: Promising nanoscale interconnects

2. Diameter control of tungsten oxide nanowires as grown by thermal evaporation

3. Large-scale synthesis of single-crystal hexagonal tungsten trioxide nanowires and electrochemical lithium intercalation into the nanocrystals

4. Ultra high-density silicon nanowires for extremely low reflection in visible regime

5. Ultra-low reflection porous silicon nanowires for solar cell applications

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