Coaxial GaAs/(In,Ga)As Dot-in-a-Well Nanowire Heterostructures for Electrically Driven Infrared Light Generation on Si in the Telecommunication O Band-Reference-Cited by-同舟云学术

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Coaxial GaAs/(In,Ga)As Dot-in-a-Well Nanowire Heterostructures for Electrically Driven Infrared Light Generation on Si in the Telecommunication O Band

Published:2019-12-16 Issue:1 Volume:3 Page:165-174
ISSN:2574-0970
Container-title:ACS Applied Nano Materials
language:en
Short-container-title:ACS Appl. Nano Mater.

Author:

Herranz Jesús¹^ORCID,Corfdir Pierre¹,Luna Esperanza¹,Jahn Uwe¹,Lewis Ryan B.¹,Schrottke Lutz¹,Lähnemann Jonas¹^ORCID,Tahraoui Abbes¹,Trampert Achim¹^ORCID,Brandt Oliver¹,Geelhaar Lutz¹

Affiliation:

1. Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, 10117 Berlin, Germany

Funder

Bundesministerium f?r Bildung und Forschung

Schweizerischer Nationalfonds zur F?rderung der Wissenschaftlichen Forschung

Alexander von Humboldt-Stiftung

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsanm.9b01866

Reference51 articles.

1. InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm

2. Detailed Study of the Influence of InGaAs Matrix on the Strain Reduction in the InAs Dot-In-Well Structure

3. Continuous-wave InAs/GaAs quantum-dot laser diodes monolithically grown on Si substrate with low threshold current densities

4. InAs/GaAs Quantum-Dot Superluminescent Light-Emitting Diode Monolithically Grown on a Si Substrate

5. Epitaxial Growth of III-V Nanowires on Group IV Substrates

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3. The influence of the electric and magnetic fields on donor impurity electronic states and optical absorption coefficients in a core/shell GaAs/Al$$_{0.33}$$Ga$$_{0.67}$$As ellipsoidal quantum dot;The European Physical Journal Plus;2023-08-31

4. Carrier Recombination in Highly Uniform and Phase-Pure GaAs/(Al,Ga)As Core/Shell Nanowire Arrays on Si(111): Implications for Light-Emitting Devices;ACS Applied Nano Materials;2023-08-11

5. Carrier separation in type-II quantum dots inserted in (Zn,Mg)Te/ZnSe nanowires;Nanoscale;2023

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